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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1408 RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS Features * * * * * * * FM CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 20W POWER GAIN 8.2dB EFFICIENCY 55% COMMON EMITTER DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor designed for 108-152MHz AM class C and FM communications. This device utilizes diffused emitter resisters to achieve VSWR at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol Parameter Value Unit VCBO VCEO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature 65 35 65 4 3 30 + 200 - 65 to + 150 V V V V A W C C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 5.83 C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1408 E LECTRICAL SPECIFICATIONS (Tcase = 25 C) 25 STATIC Symbol Test Conditions Min. Value Typ. Max. Units BVCBO BVCES BVCEO BVEBO ICBO hFE IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5 V IE = 0 V VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 V IC = 200 mA 65 65 35 4 1 5 V V V V mA DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Units POUT GP * COB f = 136 MHz f = 136 MHz f = 1 MHz VCE = 28 V VCE = 28 V VCB = 30 V 20 8.2 IE = 0 V 35 W dB PF Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1408 PACKAGE MECHANICAL DATA Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. |
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